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VOLUME 71 (2000) | ISSUE 8 | PAGE 492
Band structure observed in the current-voltage characteristics of SINININIS-type junctions
PACS: 74.50.+r, 74.80.Dm
Band structure in the conductivity of 4-barrier Νο/ΑΙ-ΑΙΟ^-ΑΙ-ΑΙΟ^-ΑΙ-ΑΙΟ^-ΑΙ--AlOa-Nb (SINININIS) tunnel junctions is observed at low temperatures. This structure is explained in terms of the interference of quasiparticle waves in a periodic barrier.