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VOLUME 70 (1999) | ISSUE 1 | PAGE 48
Weak field Hall resistance and effective carrier density across metal-insulator transition in Si-MOS structures
PACS: 71.30.+h, 73.40.Qv, 74.76.Db
We studied the weak field Hall voltage in Si-MOS structures with different mobility, across the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, the Hall voltage was found to deviate by 6-20 % from its classical value. The deviation does not correlate with the strong temperature dependence of the diagonal resistivity pxx(T). In particular, the smallest deviation in Rxy was found in the highest mobility sample exhibiting the largest variation in the diagonal resistivity pxx with temperature.