Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 81-92
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 61-80
      Volume 80
      Volume 79
      Volume 78
      Volume 77
      Volume 76
      Volume 75
      Volume 74
      Volume 73
      Volume 72
      Volume 71
      Volume 70
      Volume 69
      Volume 68
      Volume 67
      Volume 66
      Volume 65
      Volume 64
      Volume 63
      Volume 62
      Volume 61
Search
VOLUME 70 (1999) | ISSUE 7 | PAGE 473
Anomalous temperature behavior of resistivity in lightly doped manganites around a metal-insulator phase transition
An unusual temperature and concentration behavior of resistivity p(T, x) in øÁÏ./óÁÏ.ÚíÐÈ.óÉÈïÚ has been observed at slight óÉ doping (0 < χ < 0.05). Namely, introduction of copper results in a splitting of the resistivity maximum around a metal-insulator transition temperature 7o(i) into two differently evolving peaks. Unlike the original óÉ-free maximum which steadily increases with doping, the second (satellite) peak remains virtually unchanged for χ < xc, increases for χ > xc and finally disappears at xm ~ 2xc with xc ~ 0.03. The observed phenomenon is thought to arise from competition between substitution induced strengthening of potential barriers (which hamper the charge hopping between neighboring Mn sites) and weakening of carrier's kinetic energy. The data are well fitted assuming a nonthermal tunneling conductivity theory with randomly distributed hopping sites.