Quasibreakdown in the impurity Hubbard band system of noncompensated Silicon
Gurvich Yu.A., Melnikov A.P., Shestakov L.N., Gershenzon E.M.
It is discovered that in crystalline Silicon impurity conductivity abruptly increases with electric field Б at Ε > ECt where Ec a certain threshold value of field. This increase -"the quasibreakdown" (QB) is observed only in materials with extremely low compensation: К < 10~3. The dependence <r(E) in the QB region is approximated well enough by the expression \χισ ( —Weak magnetic field is able to supress QB completely. It is suggested that QB is a hopping conductivity through the localized states of upper Hubbard band tail, stimulated by electric field.
Home
![](/ps/934/article_14261_800_head.png "<b>It is discovered that in crystalline Silicon impurity conductivity abruptly increases with electric field Б at <i>Ε > E<sub>Ct</sub> </i>where <i>E<sub>c</sub> </i>a certain threshold value of field. This increase -"the quasibreakdown" (QB) is observed only in materials with extremely low compensation: <i>К </i>< 10~<sup>3</sup>. The dependence <i><r(E) </i>in the QB region is approximated well enough by the expression <i>\χισ </i>( —Weak magnetic field is able to supress QB completely. It is suggested that QB is a hopping conductivity through the localized states of upper Hubbard band tail, stimulated by electric field.</b>")