Metal-insulator transition in a two-dimensional hole gas of Si/SiGe heterostructures. Quantum or classical percolation?
Dolgopolov V.T., Shashkin A.A., Kravchenko G.V., Erneleus C.J., Whall Т.Е.
We study current-voltage characteristic* in the magnetic-field-induced insulating state of a 2D hole gas in low-mobility Si/SiGe heterostructures. The observed behaviour of J — V curves is explained by the breakdown of the insulating phase in the classical percolation model. Analysis of all experimental results obtained on different 2D systems shows that none of them is in obvious contradiction with classical percolation.