Temperature dependence of resistivity and structure of carbon nanotube films containing various kinds of tubules
Omel'yanovskii O.E., Tsebro V.I., Lebedev O.I., Kiselev A.N., Bondarenko V.I., Kiselev N.A., Kosakovskaja Z.Ja., Chernozatonskii L.A.
The temperature dependence of the resistivity over the range of 4.2 to 300 К has been measured on the carbon films containing multilayer nanotubes (MLX) or single layer nanotubes (SLT) oriented perpendicularly to the substrate. The structure of these films has been examined by high resolution electron microscopy. At low temperatures, the planar resistivity of all the films is well-fitted by the expression In? ос [Го/Г]1'*1 with η 4 and Го ~ Ю6К for the MLT funis, but with η " 2 and To ~ 20 К for the films containing the bundles of SLT of 0.71 nm in diameter. The data obtained are considered in terms of the variable-range hopping conductivity. The estimations made show a fairly high density of states at the Fermi level (~ 1021 eV-1 cm-3) for the films containing SLT's.
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![](/ps/943/article_14412_800_head.png "<b>The temperature dependence of the resistivity over the range of 4.2 to 300 К has been measured on the carbon films containing multilayer nanotubes (MLX) or single layer nanotubes (SLT) oriented perpendicularly to the substrate. The structure of these films has been examined by high resolution electron microscopy. At low temperatures, the planar resistivity of all the films is well-fitted by the expression In? ос [Го/Г]<sup>1</sup>'*<sup>1</sup> with η 4 and Го ~ Ю<sup>6</sup>К for the MLT funis, but with η " 2 and <i>To </i>~ 20 К for the films containing the bundles of SLT of 0.71 nm in diameter. The data obtained are considered in terms of the variable-range hopping conductivity. The estimations made show a fairly high density of states at the Fermi level (~ 10<sup>21</sup> eV<sup>-1</sup> cm<sup>-3</sup>) for the films containing SLT's.</b>")