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VOLUME 68 (1998) | ISSUE 4 | PAGE 305
Quantized Hall Effect in disordered GaAs layers with 3D spectrum in tilted magnetic fields
The Quantum Hall Effect structure in the transverse magnetoresistance R99 and the Hall resistance Rxy of heavily doped GaAs layers with a three-dimensional spectrum of the charge carriers has been investigated for different field orientations. The characteristic structures (minima in Rxx and plateau in Rxy) shift much slower to higher fields and are suppressed much faster compared to the expected angular dependence for a two-dimensional system. The results are discussed in terms of the anisotropic change of the three-dimensional conductivity tensor with magnetic field rotation.