Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 81-92
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 61-80
      Volume 80
      Volume 79
      Volume 78
      Volume 77
      Volume 76
      Volume 75
      Volume 74
      Volume 73
      Volume 72
      Volume 71
      Volume 70
      Volume 69
      Volume 68
      Volume 67
      Volume 66
      Volume 65
      Volume 64
      Volume 63
      Volume 62
      Volume 61
Search
VOLUME 68 (1998) | ISSUE 4 | PAGE 305
Quantized Hall Effect in disordered GaAs layers with 3D spectrum in tilted magnetic fields
PACS: 73.40.Hm, 73.50.Jt, 73.61.Ey
The Quantum Hall Effect structure in the transverse magnetoresistance R99 and the Hall resistance Rxy of heavily doped GaAs layers with a three-dimensional spectrum of the charge carriers has been investigated for different field orientations. The characteristic structures (minima in Rxx and plateau in Rxy) shift much slower to higher fields and are suppressed much faster compared to the expected angular dependence for a two-dimensional system. The results are discussed in terms of the anisotropic change of the three-dimensional conductivity tensor with magnetic field rotation.