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VOLUME 66 (1997) | ISSUE 7 | PAGE 507
Single-electron transistor effect in a two-terminal structure
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in structures with an extremely small central island confined between tunnel barriers (like an ~1 nm quantum dot or a macro-molecule probed with a tunneling microscope), where it is impossible to provide a gate electrode for control of the tunnel current. PACS: 73.23.Hk, 73.61.-r