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VOLUME 82 (2005) | ISSUE 5 |
PAGE 331
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Effects of electron-phonon interaction in tunneling processes in nanostructures
P. I. Arseyev, N. S. Maslova,
P.N.Lebedev Physical Institute RAS, 119991 Moscow, Russia Department of Physics, Moscow State University, 119992 Moscow, Russia
PACS: 73.40.Gk, 73.63.-b
Abstract
Tunneling through a system with two discrete electron levels
coupled by electron-phonon interaction is considered. The interplay between
elastic and inelastic tunneling channels is analyzed not only for
weak electron-phonon coupling but also for strong coupling in
resonant case. It is shown that intensity and width of peaks in
tunneling conductivity is strongly influenced by non equilibrium
effects.
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