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VOLUME 51 (1990) | ISSUE 1 | PAGE 35
Properties of "dirty" S-S*-N and S-S*-S structures with potential barriers at the metal boundaries
The dependence of the current/and conductivity on the voltage V, temperature, and transmission level of the barriers in "dirty" S-S *-N(S) structures is studied. The presence of two barriers may lead, in particular, to a nonmonotonic, sign-changing dependence of IV/Rn on the temperature at large values of V. Such a behavior was observed experimentally in high-7^ superconducting point contacts