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| VOLUME 51 (1990) | ISSUE 1 |
PAGE 35
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Properties of "dirty" S-S*-N and S-S*-S structures with potential barriers at the metal boundaries
Zaitsev A. V.
The dependence of the current/and conductivity on the voltage V, temperature, and transmission level of the barriers in "dirty" S-S *-N(S) structures is studied. The presence of two barriers may lead, in particular, to a nonmonotonic, sign-changing dependence of IV/Rn on the temperature at large values of V. Such a behavior was observed experimentally in high-7^ superconducting point contacts
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![](/ps/1135/article_17178_800_head.png "The dependence of the current/and conductivity on the voltage <i>V, </i>temperature, and transmission level of the barriers in "dirty" <i>S-S *-N(S) </i>structures is studied. The presence of two barriers may lead, in particular, to a nonmonotonic, sign-changing dependence of <i>IV/R<sub>n</sub> </i>on the temperature at large values of <i>V. </i>Such a behavior was observed experimentally in high-7^ superconducting point contacts")