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VOLUME 57 (1993) | ISSUE 9 | PAGE 557
Electron g-factor anisotropy in asymmetric GaAs/AlGaAs quantum well
It is shown that in an asymmetric quantum well, grown in the direction ζ 11 [001] from semiconductors with a zinc blende structure, the conduction-band spin splitting attributable to the absence of an inversion center results in conduction-electron g-factor anisotropy in the plane of the well. It is demonstrated for the example of a GaAs/AlGaAs quantum well that the off-diagonal components gxy=gyx (x||[100]); which characterize the electron g-factor anisotropy in the plane of the well, can be comparable in magnitude to the diagonal components gxx=gyy-