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VOLUME 54 (1991) | ISSUE 3 | PAGE 166
Transverse conductivity of semiconductors in an ultraquantum magnetic field in the case of Boltzmann statistics
The transverse conductivity of a semiconductor which arises in an ultraquantum magnetic field as a result of the interaction of electrons with an ionized impurity is calculated for the case of Boltzmann statistics. The conductivity is dominated by low-energy electrons undergoing a random walk in the impurity potential. The field dependence (up to 11T) and the temperature dependence (over the range ΙΟΙ 60 К) of the resistance have been measured for w-InSb samples with electron densities η ranging from 9 Χ 1012 to 1.2X 1016 cm-3. The experimental results are described well by an expression derived here.