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VOLUME 62 (1995) | ISSUE 3 | PAGE 223
Angular dependence of the probability of specular reflection of conduction electrons from the surface of a Bi sample
A method, based on transverse electron focusing (EF) [V. S. Tsoi, JETP Lett. 19, 70 (1974)] has been developed. This method is used to measure the dependence of the probability q of specular reflection of conduction electrons from the surface of a bismuth sample on the angle of incidence Θ. It can also be used to determine the irregularities of the interphase boundary (internal surfaces) in situ. © 1995 American Institute of Physics.