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VOLUME 62 (1995) | ISSUE 9 | PAGE 698
Formation of oriented nitrogen-doped carbon films
Oriented nitrogen-doped carbon films were obtained by the method of ion-assisted deposition of carbon in a nitrogen-containing glow discharge. Auger electron spectroscopy showed that the nitrogen content in the films ranges from 3 to 36 at. % with substrate temperatures from -20° С to +200°C. Nitrogen and argon were introduced into the chamber in a definite ratio up to the pressure P= 10_1 Pa. The atomic and electronic structures of the carbon films were investigated by the methods of transmission electron microscopy, Auger electron spectroscopy, and Raman spectroscopy. Single crystals with a hexagonal crystal lattice with a = 8.70 A were obtained at T= 200°C. © 1995 American Institute of Physics.