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VOLUME 40 (1984) | ISSUE 6 | PAGE 223
Cyclotron parametric resonance in "dirty" semiconductors
The existence of a cyclotron parametric resonance (CPR) in semiconductors with a short mean-free path is predicted. In contrast to the classical parametric instability in mechanics, the conditions of resonant excitation of the electronic subsystem are much less stringent and fully attainable. The width of the instability zone and the shape of the absorption curve are determined.