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VOLUME 59 (1994) | ISSUE 9 | PAGE 599
Magnetic field dependence of the localization length on the dielectric side of metal-insulator transitions
Magnetic field dependence of negative magnetoresistance (MR) in variable-range-hopping conduction is discussed. Above four dimensions, the negative MR saturates at large magnetic fields. In dimensions lower than four, the negative MR corresponds to a field-dependent correction to the localization length. A qualitative coarse-graining picture is presented for such behavior.