Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 59 (1994) | ISSUE 12 | PAGE 832
Hot-hole electrooptic effect
Two new electrooptic effects have been observed in semiconductors: a change in the refractive index and an anisotropy of this index upon the heating and drift of holes in a strong electric field. These effects are shown to result from a heating and drift of holes in the electric field and from the complex structure of the valence band. Experiments were carried out on ρ-type germanium. The experimental results agree well with theoretical predictions.