Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 60 (1994) | ISSUE 4 | PAGE 267
Thermodynamics of electron-hole fluctuations and formation of exciton phase in layered semiconductor structures
The thermodynamics of the formation of an exciton phase in a layered semiconductor structure with a narrow band gap is analyzed in a model in which the phase of the order parameter is strictly fixed. Calculations are carried out in a self-consistent fluctuation theory for static fluctuations of the amplitude of the order parameter. The temperature of the transition to the exciton phase derived for the case with fluctuation effects (Гс) is much lower than the temperature calculated in the mean-field approximation (7^). The phase transition at Tc is of first order. In a quasi-2D system, the temperature of the supercooling of the normal phase, T' (T'<TC), is nonzero, while in a purely 2D situation we would have T' =0. The temperature of the superheating of the exciton phase is T">TC. A phase with a short-range order exists over the broad temperature range TC<T<1°C . © 1994 American Institute of Physics.