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VOLUME 32 (1980) | ISSUE 5 | PAGE 344
Observation of the delocalization threshold of the H- - like states of impurity centers in doped semiconductors
The concentration threshold Nc of delocalization of excess carriers is determined from the qualitative variation of the photoconductivity (PC) spectra, and its dependence on the temperature Γ is investigated. It was determined that Nc is almost two orders of magnitude lower than the concentration NM corresponding to the Mott transition.