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VOLUME 33 (1981) | ISSUE 2 | PAGE 112
Exponential temperature dependence of the coefficient of the Nernst-Ettingshausen transverse effect in bismuth
It was determined that the Nernst coefficient Q of bismuth and its temperature dependence depend strongly on the perfection and geometric dimensions of the crystal at low temperatures. In a perfect sample Q increases exponentially with decreasing temperature. This can be accounted for by the two-stage, phonon-phonon drag of the charge carriers.