Interaction of charge carriers in multiparticle exciton-impurity complexes in silicon
Kaminskii A. S., Karasyuk V. A., Pokrovskii Ya. E.
It is shown that the "natural" width of bound-exciton emission lines in phosphorus-doped silicon does not exceed 5 μ eV and that the emission lines of multiparticle complexes have a large number of components whose splitting is explained by the interaction between the holes and between the holes and the outer electrons.
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![](/ps/1502/article_22954_800_head.png "It is shown that the "natural" width of bound-exciton emission lines in phosphorus-doped silicon does not exceed 5 <i>μ </i>eV and that the emission lines of multiparticle complexes have a large number of components whose splitting is explained by the interaction between the holes and between the holes and the outer electrons.")