Cross section for binding of free carriers into excitons in germanium
Gershenzon E. M., Gol'tsman G. N., Multanovskii V. V., Ptitsina N. G.
The kinetics of photoconductivity produced as a result of ionization of excitons in germanium by submillimeter radiation have been investigated. The cross section for binding abind of free carriers into excitons in the 1.5 to 8-K temperature range has been determined. It was found that abind is larger than the cross section for capture of carriers by an attracting shallow donor or acceptor, which was measured by the same method,1 and that it has a different temperature dependence.