Fractional quantum Hall effect at suppressed energy gap
S. S. Murzin, S. I. Dorozhkin, G. E. Tsydynzhapov, V. N. Zverev
Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia
PACS: 73.43.Qt
Abstract
In the fractional quantum Hall effect regime we measure diagonal
(ρ xx ) and Hall (ρ xy) magnetoresistivity tensor components
of two-dimensional electron system (2DES) in gated GaAs/AlxGa1-xAs
heterojunctions, together with capacitance between 2DES and the gate. We
observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic
fields where corresponding fractional minima in the thermodynamical density
of states have already disappeared implying suppression of the quasiparticle
energy gaps.