Determination of Landau's Fermi-liquid parameters in Si-MOSFET systems
A. Gold, V. T. Dolgopolov+
Centre d`Elaboration de Matériaux et d`Etudes Structurales (CEMES-CNRS), 31055 Toulouse, France
+Institute of Solid State Physics, 142432 Chernogolovka, Moscow District, Russia
PACS: 71.10.Ay, 72.10.-d, 73.20.-r
Abstract
We analyze experimental data in order to evaluate Landau's
Fermi-liquid parameters. By using row data of recent Shubnikov -de
Haas
measurements we derive, as function of the electron density ns,
results for the compressibility mass of the charged
two-dimensional electron gas. The compressibility mass is nearly
equal to the transport mass even in the density region
where the transport mass has the tendency to diverge. We conclude
that Landau's Fermi-liquid parameter F0s(ns) is nearly
independent of electron density and near to zero. This result is
derived for silicon (100) and silicon (111) surfaces.
We also obtain the dependence of F1s(ns), determining the
transport mass, and of F0a(ns), determining the
spin-susceptibility.