Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 61-80
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 81-92
      Volume 92
      Volume 91
      Volume 90
      Volume 89
      Volume 88
      Volume 87
      Volume 86
      Volume 85
      Volume 84
      Volume 83
      Volume 82
      Volume 81
Search
VOLUME 88 (2008) | ISSUE 12 | PAGE 934
Spin relaxation in the impurity band of a semiconductor in the external magnetic field
PACS: 71.55.Jv, 71.70.Ej, 72.25.Rb, 85.75.-d
Abstract
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum and hyperfine interaction in the external magnetic field is considered. Two contributions to the spin relaxation are shown to be relevant: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to electron motion over large distances. The average spin relaxation rate is calculated.