Correlation induced switching of local spatial charge distribution in two-level system
P. I. Arseyev*, N. S. Maslova+, V. N. Mantsevich+
*P.N. Lebedev Physical institute of RAS, 119991 Moscow, Russia
+Moscow State University, Department of Physics, 119991 Moscow, Russia
Abstract
It was found that tunneling
current through a nanometer scale structure with strongly coupled
localized states causes spatial
redistribution of localized charges induced by Coulomb correlations.
We present here theoretical investigation of this effect
by means of Heisenberg equations for localized
states electron filling numbers. This method allows to take into
account pair correlations of local electron density exactly. It is
shown that inverse occupation of the two-level system caused by
Coulomb correlations appears in particular range of applied bias.
Described effects can give a possibility of charge manipulation in
the proposed system. We also expect that described results can be
observed in tunneling structures with impurities or with small
quantum dots.