Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-120
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 100 (2014) | ISSUE 3 | PAGE 186
Positive magnetoresistance peaked at ferromagnetic transition in Mn-doped quantum wells GaAs/AlGaAs
Abstract
A large positive magnetoresistance peaked at the Curie temperature was observed in quantum well structures GaAs/AlGaAs doped by Mn. We suggest a new mechanism of magnetoresistance within low Tc ferromagnets resulting from a pronounced dependence of spin polarization at the vicinity of Tc on the external magnetic field. As a result, any contribution to resistance dependent on the Zeeman splitting of the spin subbands is amplified with respect to the direct effect of the external field. In our case we believe that the corresponding contribution is related to the upper Hubbard band. We propose that the mechanism considered here can be exploited as the mark of ferromagnetic transition.