Home
| VOLUME 112 (2020) | ISSUE 3 | PAGE 172 |
|---|
|
Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content
H. Wang+, Q. Tan+*, X. He+
+Academy of Electronic Information and Electrical Engineering, Xiangnan University, 423000 Chenzhou, China *Institute of Physics and Information Science, Hunan Normal University, 410081 Changsha, China
Abstract
|