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VOLUME 82 (2005) | ISSUE 2 | PAGE 82
Strongly asymmetric single-electron transistor operating as zero-biased electrometer
PACS: 73.23.Hk, 73.40.Rw
Abstract
We have studied a strongly asymmetric Al single-electron transistor with R_{1}\ll R_{2} and C_{1}\gg C_{2}, where R1,2 and C1,2 are the tunnel resistances and capacitances of the first and second junction respectively. Due to asymmetry in its electric parameters, leading to strong asymmetry of the nonlinear I-V curve at zero bias (V=0), the transistor demonstrated remarkable current response to ac signal at the values of gate charge Q0 close to (n+1/2)e, where n is integer. A rather delicate regime of the transistor operation (V \ll e/C_\Sigma) being important for unperturbed measurements was examined. The measured curves are in good agreement with a model based on the orthodox theory of single electron tunneling. This specific zero bias regime of asymmetric transistor opens new opportunities for single-electron transistor as ultra-sensitive charge/field sensor.