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VOLUME 82 (2005) | ISSUE 2 |
PAGE 82
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Strongly asymmetric single-electron transistor operating as zero-biased electrometer
V. A. Krupenin, D. E. Presnov+, V. O. Zalunin, S. A. Vasenko, A. B. Zorin+*
Laboratory of Cryoelectronics, Moscow State University, 119899 Moscow, Russia +Nuclear Physics Institute, Moscow State University, 119899 Moscow, Russia *Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
PACS: 73.23.Hk, 73.40.Rw
Abstract
We have studied a strongly asymmetric Al single-electron
transistor with and , where
R1,2 and C1,2 are the tunnel resistances and capacitances
of the first and second junction respectively. Due to asymmetry in
its electric parameters, leading to strong asymmetry of the
nonlinear I-V curve at zero bias (V=0), the transistor
demonstrated remarkable current response to ac signal at
the values of gate charge Q0 close to (n+1/2)e, where n is
integer. A rather delicate regime of the transistor operation ( ) being important for unperturbed measurements was
examined. The measured curves are in good agreement with a model
based on the orthodox theory of single electron tunneling. This
specific zero bias regime of asymmetric transistor opens new
opportunities for single-electron transistor as ultra-sensitive
charge/field sensor.
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