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VOLUME 72 (2000) | ISSUE 8 | PAGE 617
Phonon laser and indirect exciton dispersion engeneering
PACS: 63.20.Ls, 71.35.+z
Engineering of dispersion of indirect exciton by normal electric and in-plane magnetic fields is proposed to be used for controlling of state of many-exciton system (e.g. coherent state) and its photoluminescence and producing an inverse population in excitonic system. The possibility of phonon laser creation on the basis of last effect is discussed. Phonon number distribution appears to be a fingerprint of that of exciton system. Numerical estimations for the proposed scheme are made for GaAs/AlGaAs quantum wells.